PART |
Description |
Maker |
TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies UHV240-KH/AS PTSA 0.5/ 9-2.5-Z Discrete POWER & Signal Technologies 分立功率 1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器(功500瓦的瞬变电压抑制器) 1500 Watt Transient Voltage Suppressors(???500???????靛?????? Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. http://
|
SLD-2000 |
12 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP Power 15A 140V Discrete NPN Complementary Silicon Power Transistors
|
ON Semiconductor
|
G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
CGH40045 |
45 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|
GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
GX2441 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|