| PART |
Description |
Maker |
| STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics
ST Microelectronics
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| STP7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STP16N65M2 |
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
ST Microelectronics
|
| STW57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-247 package
|
ST Microelectronics
|
| STW34N65M5 STI34N65M5 |
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh(TM) V Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STL19N65M5 |
N-channel 650 V, 0.215 Ohm typ., 12.5 A MDmesh(TM) V power MOSFET in a PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| R9110 |
MOSFET, Switching; VDSS (V): 150; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.097; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
