| PART |
Description |
Maker |
| IRF1010NS |
Fully Avalanche Rated
|
Kersemi Electronic Co., Ltd...
|
| AUIRLR024NTRR AUIRLU024N AUIRLR024NTRL |
Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
|
International Rectifier
|
| IRFF310 2476 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
From old datasheet system
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
|
IRF[International Rectifier]
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated
60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| SPD18P06P08 SPD18P06PG |
SIPMOSò Power-Transistor Features Enhancement mode Avalanche rated
SIPMOS? Power-Transistor Features Enhancement mode Avalanche rated
|
Infineon Technologies AG
|
| IRF510 SIHF510 |
Repetitive Avalanche Rated
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| BUK9Y3R0-40E |
Repetitive avalanche rated
|
NXP Semiconductors
|
| SFF50N30M SFF50N30Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
