| PART |
Description |
Maker |
| PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TA060-180-20-10 |
6 ~ 18 MHz 10dBm Low Noise Amplifier
|
Transcom, Inc.
|
| TA020-060-11-10 |
2 ~ 6GHz 10dBm Low Noise Amplifier
|
Transcom, Inc.
|
| MAX1479 MAX1479ATE |
300MHz to 450MHz Low-Power, Crystal-Based 10dBm ASK/FSK Transmitter
|
MAXIM[Maxim Integrated Products]
|
| MAX147909 |
300MHz to 450MHz Low-Power, Crystal-Based 10dBm ASK/FSK Transmitter
|
Maxim Integrated Products
|
| CGB7005-SC07 PB-CGB7005-SC-0000 CGB7005-SC-0G00 CG |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
DC-6.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier
|
Mimix Broadband, Inc.
|
| CGB7001-SP07 CGB7001-SP PB-CGB7001-SP-0000 CGB7001 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
DC-6.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier
|
Mimix Broadband, Inc.
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
