| PART |
Description |
Maker |
| STPSC6H065G-TR STPSC6H065B-TR STPSC6H065D STPSC6H0 |
650 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| STPSC4H065D |
650 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 2N65 2N65L-TN3-R 2N65G-TA3-T 2N65G-TF1-T 2N65L-TF3 |
2 Amps, 650 Volts N-CHANNEL POWER MOSFET
2 A, 650 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| STW34N65M5 STI34N65M5 |
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh(TM) V Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STF6N65M2 STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
ST Microelectronics
|
| DSSK48-003B DSSK48-003BS |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS Corporation
|
| DSSK30-0045A |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
|
