PART |
Description |
Maker |
ST2301SRG ST2301A |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST3401SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
TSM2301CXRF |
Advance trench process technology
|
TY Semiconductor Co., Ltd
|