| PART |
Description |
Maker |
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| NE552R479A-T1A-A NE552R479A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
CEL[California Eastern Labs]
|
| NE552R479A-T1A-A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Laboratories
|
| BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
UHF Linear power transistor(UHF 线性功率晶体管)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| UPG2030TB UPG2030TB-E3 |
NECs 1W L/ S-BAND SPDT SWITCH
NECs 1W L, S-BAND SPDT SWITCH
|
NEC[NEC]
|
| UPG2009TB UPG2009TB-E3 |
NECs L S-BAND 4W SPDT SWITCH
NECs L, S-BAND 4W SPDT SWITCH
NECs L/ S-BAND 4W SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| UPG2227T5F-E2-A UPG2227T5F |
NECs L-BAND SP3T SWITCH
|
CEL[California Eastern Labs]
|
| UPG2006TB UPG2006TB-E3 |
NECs 1.8 V L/ S-BAND SPDT SWITCH
NECs 1.8 V L, S-BAND SPDT SWITCH
|
NEC[NEC]
|
