| PART |
Description |
Maker |
| N211021 |
packaged : In Dispensing Tube
|
E-SWITCH
|
| N211020 |
Packaged : In Dispensing Tube
|
E-SWITCH
|
| M29F002BNT55K1T M29F002BT55K1T M29F002BB70N6T M29F |
CONNECTOR ACCESSORY
Cyanoacrylate Adhesive; Dispensing Method:Tube RoHS Compliant: Yes
RoHS Compliant:Yes RoHS Compliant: Yes
Long latch ejector
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8，启动座单电源闪
|
STMicroelectronics N.V.
意法半导
??????浣?
|
| N311051 |
Package : In Dispensing Tubes
|
E-SWITCH
|
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| OV7411N OV7635 OV9630 OV7648 OV7431 |
MCU CMOS 18LD 4MHZ 1K EPRM, 0C to 70C, 18-PDIP, TUBE
MCU CMOS 18LD 20MHZ 1K EPRM, 0C to 70C, 18-SOIC 300mil, TUBE
MCU CMOS 18LD 20MHZ 1K EPRM, -40C to 85C, 18-PDIP, TUBE
MCU CMOS 20LD 20MHZ 1K EPRM, -40C to 85C, 20-SSOP 208mil, TUBE
packaging specifications
MCU CMOS 18LD 4MHZ 1K EPRM, -40C to 85C, 18-PDIP, TUBE /黑白| NTSC制式| 508 × 492 |模拟|的CameraChip |技术报
|
Omnivision Technologies Inc.
|
| ISL4221E ISL4221EIR ISL4221EIRZ ISL4223E ISL4223EI |
QFN Packaged, 卤15kV ESD Protected, 2.7V to 5.5V, 150nA, 250kbps, RS-232 2.7V to 5.5V, 150nA, 250kbps, RS-232
QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 150nA, 250kbps, RS-232 2.7V to 5.5V, 150nA, 250kbps, RS-232
QFN Packaged, 5kV ESD Protected, 2.7V to 5.5V, 150nA, 250kBps, RS-232 Transmitters/Receivers LINE TRANSCEIVER, PQCC16
|
Intersil Corporation
Intersil, Corp.
|
| 2SC351504 |
HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| P4C164L-25CC P4C164L-25CM P4C164-25CC P4C164-25CM |
1.5A Dual High-Speed Power MOSFET Drivers, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Driver, -40C to 125C, 8-MSOP, TUBE
1.5A MOSFET Drvr W/Boost, Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, 0C to 70C, 8-PDIP, TUBE
16 Bit Analog Processor, 0C to 70C, 16-SOIC 300mil, T/R
16 Bit Analog Processor, -25C to 85C, 16-CERDIP, TUBE
Precision Analog Front End, 0C to 70C, 24-SOIC 300mil, TUBE
1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Drvr, td Match, -40C to 85C, 8-SOIC 150mil, T/R
1.5A DUAL MOSFET DRVR, -40C to 85C, 8-DFN, T/R
1.5A Dual MOSFET Drvr, td Match, -55C to 125C, 8-CERDIP 300mil, TUBE
30V N-Channel PowerTrench MOSFET
1.2A Quad MOSFET Drvr, AND I/P, 0C to 70C, 14-PDIP, TUBE x8的SRAM
x8 SRAM x8的SRAM
|
MOSFETs
Infineon Technologies AG
|
| 2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| 2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
|
