| PART |
Description |
Maker |
| UPD166025T1J-E1-AY UPD166025T1J-E2-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166011T1J UPD166011T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166013T1J UPD166013T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166026T1K |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| TPD4104AK07 |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4122K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4112K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4124K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 8A条（丁）|63AB
|
International Rectifier, Corp.
|
| TPD1028BS |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS IC
Low-Side Switch for Motors, Solenoids, and Lamp Drivers
|
TOSHIBA[Toshiba Semiconductor]
|
| DLX3416 |
Intelligent Display Device
|
OSRAM GmbH
|
