PART |
Description |
Maker |
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
2SK2038 K2038 |
2SK2038 N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR From old datasheet system N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型(高速,高电流开关应用)
|
Toshiba. TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
RJK0631JPE-00-J3 RJK0631JPE13 RJK0631JPE-15 |
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HAT1026R |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT1029R |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT2049T |
Silicon N Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT1065R-EL-E HAT1065R |
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0636JPD |
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HAT2016R HAT2016R-EL-E |
Silicon N Channel Power MOS FET High Speed Power Switching
|
http:// Renesas Electronics Corporation
|
HAT2026R HAT2026R-EL-E |
Silicon N Channel Power MOS FET High Speed Power Switching
|
http:// Renesas Electronics Corporation
|