| PART |
Description |
Maker |
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MCR100JZHFL MCR100 MCR100JZHFS0.068OHM MCR100JZHFS |
Low Ohmic Thick Film Chip Resistors
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
|
Rohm
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| APT802R8AN APT8030CFN |
4.5 A, 800 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
29 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| STD7N80K5 STU7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| SSS4N80 |
2.3 A, 800 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
|
| IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| IRFD220 |
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
|
Intersil Corporation
|
| BUK438W-800A127 |
7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
NXP Semiconductors N.V.
|
|
