PART |
Description |
Maker |
RJP4301APP09 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP5001APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY20AAJ-8 CY20AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY25BAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY20AAH-8F |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
CY25BAH-8F CY25BAH-8F-T13 |
D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No NCH IGBT FOR STROBE FLASHER Transistors>IGBT>for Stlobe use
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|