| PART |
Description |
Maker |
| GMD81400 GMF11201 GMF10201 GMF90201 GMF10601 GMF10 |
CAPACITOR, VARIABLE, MICA, 250 V, 380 pF - 1300 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 880 pF - 2330 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 15 pF - 130 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 2000 V, 10 pF - 48 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 275 pF - 970 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 550 pF - 1600 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 65 pF - 340 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 450 pF - 1390 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 1300 pF - 2830 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 115 pF - 550 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 1150 pF - 2605 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 45 pF - 280 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 350 pF - 1180 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 190 pF - 760 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 780 pF - 2110 pF, PANEL MOUNT
CAPACITOR, VARIABLE, MICA, 250 V, 650 pF - 1890 pF, PANEL MOUNT
|
Sprague-Goodman Electronics, Inc.
|
| 1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc.
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| 1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| 1503 1503J 1503-100A 1503-100B 1503-100C 1503-120B |
Max delay 35 ns, Mechanically variable delay line
Max delay 250 ns, Mechanically variable delay line
Max delay 150 ns, Mechanically variable delay line
Max delay 130 ns, Mechanically variable delay line
Max delay 80 ns, Mechanically variable delay line
Max delay 60 ns, Mechanically variable delay line
Max delay 50 ns, Mechanically variable delay line
Max delay 40 ns, Mechanically variable delay line
Max delay 30 ns, Mechanically variable delay line
Max delay 25 ns, Mechanically variable delay line
Max delay 20 ns, Mechanically variable delay line
Max delay 200 ns, Mechanically variable delay line
Max delay 160 ns, Mechanically variable delay line
Max delay 15 ns, Mechanically variable delay line
Max delay 140 ns, Mechanically variable delay line
Max delay 120 ns, Mechanically variable delay line
Max delay 100 ns, Mechanically variable delay line
Mechanically variable passive delay line
|
Data Delay Devices Inc
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
From old datasheet system
VHF variable capacitance diode(VHF 可变电容二极
HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
|
NXP Semiconductors
Philips Semiconductors
Philipss
Quanzhou Jinmei Electro...
|
| ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
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