| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| APT20GT60AR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 30A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 40A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一
The Fast IGBT is a new generation of high voltage power IGBTs
Fast IGBT & FRED 1200V 60A
|
Advanced Power Technology, Ltd.
|
| LM1458 LM741 LM1558 CA741 CA741C CA1458 LM741C CA1 |
HIGH-GAIN SINGLE AND DUAL OPERATIONAL AMPLIFIERS FOR MILITARY INDUSTRIAL AND COMMERCIAL APPLICATIONS
High-gain operational amplifier
|
Harris Corporation
Harris Semiconductor
|
| IXGH6N170A09 IXGT6N170A |
High Voltage IGBTs
|
IXYS Corporation
|
| IXGH40N60C2 IXGT40N60C2 |
C2-Class High Speed IGBTs
|
IXYS Corporation
|
| C10508-01-15 |
Variable gain, stable detection even at high gain
|
Hamamatsu Corporation
|
| IXGP16N60C2 IXGA16N60C210 |
HiPerFAST IGBTs C2-Class High Speed
|
IXYS Corporation
|
| IXGP16N60B2 IXGA16N60B2 |
HiPerFAST IGBTs B2-Class High Speed
|
IXYS Corporation
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