| PART |
Description |
Maker |
| 2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPA1913TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1730G-E1 UPA1730TP-E2 UPA1730TP-E1 UPA1730G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
| BFC40 |
NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| QS8J13 QS8J13TR |
-12V Pch Pch Middle Power MOSFET
|
ROHM
|
| QS8M51FRA QS8M51FRATR |
100V Pch Pch Middle Power MOSFET
|
ROHM
|
| NTE2996 |
Enhancement Mode High Speed Switch
|
NTE Electronics
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| NTE2921 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2900 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
