| PART |
Description |
Maker |
| 2SD1857A 2SD1918 2SD2211 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power Transistor (160V 1.5A)
Power Transistor (160V , 1.5A)
|
ROHM[Rohm]
|
| EN3578A 2SC4614S-AN 2SC4614T-AN 2SA1770S-AN |
Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP
|
ON Semiconductor
|
| 2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| DXT5551P5 DXT5551P5-13 |
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| 2SD2030C 2SD2031 |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一（c）|2
|
Hitachi,Ltd.
|
| BUK98150-55 |
TrenchMOS transistor Logic level FET
Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
