PART |
Description |
Maker |
UT62L5128BS-55L UT62L5128BS-55LE UT62L5128BS-55LL |
Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM
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UTRON Technology
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IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V TSI-TDM Switches 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
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IDT[Integrated Device Technology]
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MKI41T56 MKI41T56N00 MKI41T56N00TR MKI41T56S00 MKI |
512 bit (64b x8) Serial Access TIMEKEEPER SRAM From old datasheet system 512 bit (64b x8) Serial Access TIMEKEEPER ? SRAM 512 bit 64b x8 Serial Access TIMEKEEPER SRAM 5124B条x8串行SRAM的访问计时器
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
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AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM
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Alliance Semiconductor
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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
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List of Unclassifed Man... List of Unclassifed Manufacturers N.A. Unisonic Technologies ETC[ETC] Electronic Theatre Controls, Inc.
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5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped. 128K x 32 SRAM. 15ns access time. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish gold.
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Aeroflex Circuit Technology
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LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
M41T60Q6F M41T6010 |
Serial access real-time clock
|
STMicroelectronics
|
CY14B108M-ZSP25XI CY14B108M-ZSP45XIT CY14B108K-ZS4 |
8-Mbit (1024 K 8/512 K 16) nvSRAM with Real Time Clock
|
Cypress
|
CY14B512PA-SFXI CY14B512PA-SFXIT CY14C512PA12 |
512-Kbit (64 K × 8) SPI nvSRAM with Real Time Clock
|
Cypress Semiconductor
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5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). UT9Q512K32 16Megabit SRAM MCM UT9Q512K32 16Megabit SRAM MCM 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
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AEROFLEX[Aeroflex Circuit Technology]
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