PART |
Description |
Maker |
NX8562LB NX8562LB-BA NX8562LB-CA NX8563LB NDL7603P |
1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE 1 550 nm的连续光源InGaAsP的应变量子阱激光器激光二极管模块
|
NEC, Corp. NEC Corp. NEC[NEC]
|
ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE 1553 nm, LASER DIODE 1558 nm, LASER DIODE 1544 nm, LASER DIODE InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制 InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制 1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
NX5522 NX5522EH NX5522EK |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
NX5504_06 NX5504 NX5504EH-AZ NX5504EK-AZ NX550406 |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
NX7538BF-AA-AZ NX7538BF-AA |
1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
|
NEC[NEC]
|
ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7335AN-AA NX7335BN-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应 InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp. NEC Corp. NEC[NEC]
|