| PART |
Description |
Maker |
| STGW40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| IGW40N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| MBQ60T65PES |
High Speed Fieldstop Trench IGBT Second Generation
|
MagnaChip Semiconductor...
|
| RJK6018DPK11 |
600 V - 30 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6034DPD-E0 |
600 V - 1 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW40H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGWT30H65FB STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
|
ST Microelectronics
|
| PMV90EN |
30 V, single N-channel Trench MOSFET High-speed line driver Switching circuits
|
TY Semiconductor Co., Ltd
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
