| PART |
Description |
Maker |
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| IS61QDB251236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7A161830B K7A163630B |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG ELECTRONICS
|
| KM736V989 KM718V089 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronic
Samsung semiconductor
|
| K7R163684B06 K7R161884B |
512Kx36 & 1Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| KM718V089 KM736V989 |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
