
	Part Number	Hot Search : 225000 N74F260 MN1614 FCR0860 FCR0860 FCR0860 CSA614Y SOC1010
	Product Description
	Full Text Search

IRG4RC10UPBF - INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR

IRG4RC10UPBF_7887425.PDF Datasheet

Part No.

IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

Description

INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation

File Size

647.10K / 10 Page

Maker

International Rectifier

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: IRG4RC10U

Maker: IR

Pack: TO-252

Stock: Reserved

Unit price for :

50: $0.30

100: $0.29

1000: $0.27

Email: oulindz@gmail.com

Contact us

Homepage

http://www.irf.com/

Download

[ IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 Datasheet PDF Downlaod from Datasheet.HK

]
[IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for IRG4RC10UPBF ]

[ Price & Availability of IRG4RC10UPBF by FindChips.com ]

Full text search : INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR

Related Part Number

PART	Description	Maker
IRG4BC40K	Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管） INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package	International Rectifier, Corp. IRF[International Rectifier]
CT90AM-18	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR	Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
MMG05N60D-D	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate	ON Semiconductor
MGP7N60E-D	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate	ON Semiconductor
MGP21N60E-D	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate	ON Semiconductor
MMG05N60D_D ON2233 MMG05N60D	Insulated Gate Bipolar Transistor From old datasheet system N-hannel Enhancement-ode Silicon Gate	ONSEMI[ON Semiconductor]
IRG4PC30FDPBF IRG4PC30FDPBF-15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT	International Rectifier
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate IGBT 0.5 A @ 25 600 V From old datasheet system	ONSEMI[ON Semiconductor]
IRG4BC20KDPBF IRG4BC20KDPBF-15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAGAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	International Rectifier
MG15J6ES40	INSULATED GATE BIPOLAR TRANSISTOR	Toshiba Semiconductor
IRG4BC40UPBF-15	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
IRG4PF50W	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier

Related keyword From Full Text Search System

IRG4RC10UPBF bridge	IRG4RC10UPBF 什么封装	IRG4RC10UPBF speech voice	IRG4RC10UPBF transceiver	IRG4RC10UPBF maker
IRG4RC10UPBF Frequenc	IRG4RC10UPBF pulse	IRG4RC10UPBF connector	IRG4RC10UPBF Epitaxial	IRG4RC10UPBF series