PART |
Description |
Maker |
DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030 |
-300 mA, PNP silicon transistor Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp] KODENSHI KOREA CORP.
|
DN050 |
Extremely low collector-to-emitter saturation voltage Suitable for low voltage large current drivers
|
KODENSHI KOREA CORP.
|
PZTA29 |
Applications requiring extremely high current gain at collector currents to 500mA
|
Fairchild Semiconductor
|
2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
ASM3P2853A ASM3P2853A_V0.7 ASM3P2853AF-08-ST ASM3P |
Peak EMI Reducing Solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
ALSC[Alliance Semiconductor Corporation]
|