PART |
Description |
Maker |
BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3 INDUCTOR PWR UNSHIELD 470UH SMT Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M Leaded Power Transistor General Purpose
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Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
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SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
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INFINEON[Infineon Technologies AG]
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IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor 100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
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Infineon Technologies AG
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FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V PNP Low Sat Transistor TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
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Zetex Semiconductors Diodes Incorporated Zetex Semiconductor PLC
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986 15 A, 140 V, NPN, Si, POWER TRANSISTOR 16 A, 80 V, PNP, Si, POWER TRANSISTOR 16 A, 250 V, PNP, Si, POWER TRANSISTOR
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Motorola AMERICAN MICROSEMICONDUCTOR INC
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MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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IPB80N04S2-H4 IPI80N04S2-0H4 IPP80N04S2-H4 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
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INFINEON[Infineon Technologies AG]
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IPB091N06NG IPP091N06NG |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
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IPB070N06NG IPP070N06NG |
OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
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Infineon Technologies AG
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