PART |
Description |
Maker |
CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM 131072-word ? 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM 128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation] Sony, Corp.
|
MX26LV400TXEC-70G MX26LV400 MX26LV400BTC-55 MX26LV |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
IC61C6416 IC61C6416-15K IC61C6416-15KI IC61C6416-1 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM BROTHER P-TOUCH LABELER 64K X 16 HIGH-SPEED CMOS STATIC RAM 64K的16 HIGH-SPEED的CMOS静态RAM
|
Integrated Circuit Solu... ICSI Integrated Circuit Solution Inc Black Box, Corp.
|
KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns 16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32 128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32 131072-word x 8-bit High Speed CMOS Static RAM 131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp. SONY
|
BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel surface mount silicon Zener diodes Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
CXK591000YM-55LL CXK591000TM CXK591000TM-10LL CXK5 |
131/072-word X 9-bit High Speed CMOS Static RAM 131,072-word X 9-bit High Speed CMOS Static RAM 131,072字9位高速CMOS静态RAM 128 x 64 pixel format, LED Backlight available 131,072字9位高速CMOS静态RAM
|
SONY[Sony Corporation] Sony, Corp.
|
IC62LV5128LL IC62LV5128L IC62LV5128L-55B IC62LV512 |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM 131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY Vishay Intertechnology, Inc.
|
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|