| PART |
Description |
Maker |
| IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology
Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
| IRF7663PBF |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
International Rectifier
|
| KRF7325 |
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| BTB04-600B |
Advanced high cell denity trench technology for ultra RDS(ON)
|
Kersemi Electronic Co.,...
|
| SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
| IRGPS4067DPBF |
Low VCE (on) Trench IGBT Technology
|
International Rectifier
|
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| R5F10RB8A R5F10RB8G R5F10RBAG R5F10RBCA R5F10RBCG |
Ultra-Low Power Technology
|
Renesas Electronics Corporation
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
