| PART |
Description |
Maker |
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| CM50DY-24H |
Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| IRGC49B120UB |
1200 V, N-CHANNEL IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| 7MBR15NE120 |
IGBT MODULE(1200V/15A/PIM) 15 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| DIM200WBS12-A000 |
Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| SEMIX352GB128DS08 |
SPT IGBT Modules 370 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
