| PART |
Description |
Maker |
| 05U4L 05U1L 05U3L 05U2L |
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere
0.5 A, 200 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
RECTRON LTD
|
| CMNT3904E CMNT3906E CMNT3906EBK CMNT3904ETR |
COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor Corp
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| RL153G-F 1N4007GH05 1N4007GH03-2 1N4005GH08 |
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| UGF120 |
1 A, 200 V, SILICON, SIGNAL DIODE
|
MICROSEMI CORP-COLORADO
|
| CMLD3003DOTR |
0.2 A, 200 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| ERA22-02 ERA22-06 |
0.5 A, 200 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
|
FUJI ELECTRIC CO LTD
|
| FR103-T3 FR105-T3 FR103-GT3 |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
SENSITRON SEMICONDUCTOR
|
| BAV201 BAV202 |
0.25 A, 120 V, SILICON, SIGNAL DIODE
0.25 A, 200 V, SILICON, SIGNAL DIODE
|
VISHAY TELEFUNKEN
|
| 1N4003TA2B2 1N4006TR |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
NIHON INTER ELECTRONICS CORP
|
| PMEG3002EJ PMEG3002EJ-15 |
200 mA low Vf MEGA Schottky barrier rectifier 0.2 A, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
|
|
