| PART |
Description |
Maker |
| N25Q00AA |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q032A13E1241F N25Q032A13ESE40G N25Q032A13ESC40G |
32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Micron Technology
|
| N25Q128A11BSFH0E N25Q128A21BSFH0E N25Q128A31BSFH0E |
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| MX25L12835E MX25L12835EMI-10G MX25L12835EZNI-10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
|
Macronix International
|
| MX25L6445EM MX25L6445EM2 MX25L6445EM2I10G MX25L644 |
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| W55F05 W55F10 W55F20 W55FXX |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
SERIAL FLASH EEPROM SERIES
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M25P80-VMF6P M25P80-VMP6 M25P80-VMP6T M25P80-VMW6T |
8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M25P40-VMN M25P40-VMN6T M25P40-VMW6T -M25P40-VMN6T |
4 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
意法半导
STMicroelectronics N.V.
|
| M25P32-VME6 M25P32-VMF6 M25P32-VMF6G M25P32-VMF6T |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| M45PE20 M45PE20-VMN6 M45PE20-VMN6G M45PE20-VMN6P M |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
From old datasheet system
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
