| PART |
Description |
Maker |
| TLE6250GV3 TLE6250C TLE6250CV33 TLE6250G TLE6250GV |
Stand alone - High Speed CAN Transceiver for 3.3V micro Controller (Bare Die)
Stand alone - High Speed CAN Transceiver (Bare Die)
CAN-Transceiver
|
INFINEON[Infineon Technologies AG]
|
| S6302 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6205 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S4001 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4102 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4105 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6202 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S2301-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| 5SMX12K1273 |
IGBT-Die 75 A, 1200 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
ABB Semiconductors
|
| 5SMY12K1201 |
IGBT-Die
|
The ABB Group
|
