| PART |
Description |
Maker |
| HFR8A06S |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8L06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8A12 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR10A06F |
Glass Passivated HyperFast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| GBPC25 GBPC GBPC35 GBPC12 GBPC15 GBPC2504 GBPC3504 |
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
12/ 15/ 25/ 35 Ampere Glass Passivated Bridge Rectifiers
25 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电5A，重复反相电压峰00V)) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers 12555安培玻璃钝化整流
25 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
15 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
|
Chenyi Electronics
http://
|
| GBL400G GBL401G GBL406G |
4.0Amp GLASS PASSIVATED BRIGGE Rectifiers GLASS PASSIVATED
|
First Components International
First Components Intern...
|
| FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥
Bridge Rectifiers (Power) 桥式整流器（电力
10 Amp Glass Passivated Bridge Rectifier
10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| GS1J-T1 GS1J-T3 GS1A GS1M-T3 GS1A-T1 GS1A-T3 GS1B- |
CHOKE RF CONFORMAL COATED 0.68UH
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 安培表面贴装玻璃钝化整流
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
WON-TOP ELECTRONICS CO LTD
|
| HER30-1500G |
Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
|
Gulf Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
