| PART |
Description |
Maker |
| SFH6319 SFH6318 |
From old datasheet system
LOW CURRENT HIGH GAIN OPTOCOUPLER
LOW CURRENT, HIGH GAIN OPTOCOUPLER
LOW CURRENT / HIGH GAIN OPTOCOUPLER
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HCPL2730M HCPL2731M 6N139M 6N138SDVM HCPL2730SM HC |
8-Pin DIP Single-Channel Low Input Current High Gain Split Darlington Output Optocoupler
Dual-Channel: HCPL2730M, HCPL2731M (Preliminary) Low Input Current High Gain Split Darlington Optocouplers
Low current ?0.5mA
2 CHANNEL LOGIC OUTPUT OPTOCOUPLER
|
FAIRCHILD SEMICONDUCTOR CORP
光宝科技股份有限公司
|
| BC869 |
High current. Three current gain selections. 1.2 W total power dissipation.
|
TY Semiconductor Co., L...
|
| 6N138 6N139 |
LOW INPUT CURRENT/ HIGH GAIN OPTOCOUPLER
LOW INPUT CURRENT, HIGH GAIN OPTOCOUPLER
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCP69-10 BCP69 BCP69-16 BCP69-25 Q62702-C2133 Q627 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| NTE28 |
Germanium PNP Transistor High Current, High Gain Amplifier
|
NTE[NTE Electronics]
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SD2114K |
High DC current gain. High emitter-base voltage. Low VCE (sat).
|
TY Semiconductor Co., Ltd
|
| 2SC4005 |
High DC current gain.
|
Inchange Semiconductor ...
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
