| PART |
Description |
Maker |
| TPD1036F |
Intelligent power device 60V (Low side switch)
|
TOSHIBA
|
| UPD166101GR20 UPD166100BV UPD166100GR UPD166100GR2 |
N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE
|
NEC[NEC]
|
| HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation
Toshiba, Corp.
|
| TPD4101K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
TOSHIBA
|
| TPD4112K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4104AK TPD4104AKLBF |
BRUSHLESS DC MOTOR CONTROLLER, 3 A, PZFM23
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| MIP0124SY MIP0122SY MIP0123SY MIP0129SY MIP0125SY |
(MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series
|
Panasonic
|
| TPD4151K |
Intelligent power device 250V (High voltage PWM DC brushless motor driver)
|
TOSHIBA
|
| ATP30212 ATP302-TL-H ATP302 |
P-Channel Power MOSFET, -60V, -70A, 13mOhm, ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| EN8586A 2SJ661-12 EN8586 |
P-Channel Power MOSFET, -60V, -38A, 39mOhm, TO-262-3L/TO-263-2L
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V
MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules:1200V
50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
