| PART |
Description |
Maker |
| Q2406A Q2406B Q2426E Q2406 Q2406D Q2406E Q2426 Q24 |
SELF CONTAINED E GSM/GPRS 900/1800 OR 850/1900 BI BAND MODULE
|
ETC[ETC]
|
| FW91TNCM |
Penta-band cellular 2G/3G GSM/CDMA/UMTS Flexible Whip Monopole Antenna 850/900/1800/1900/2100 MHz
|
List of Unclassifed Man...
|
| PC29090100A |
TheStripe Penta-band Cellular 850 / 900 / 1800 / 1900 UMTS / WCDMA (3G) 2100 MHz PCB Antenna
|
Taoglas antenna solutio...
|
| TQM6M5001 |
3V Quad-Band GSM/EDGE 850/900 DCS/PCS Transmit Module
|
TriQuint Semiconductor
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SK3078 |
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
Toshiba Semiconductor
|
| 2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA
|
| BGA735N16 |
High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)
High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)
|
Infineon Technologies AG
Infineon Technologies A...
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
