PART |
Description |
Maker |
ISL58315 |
High Speed Triple Laser Diode Drivers
|
Intersil Corporation
|
ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE 1553 nm, LASER DIODE 1558 nm, LASER DIODE 1544 nm, LASER DIODE InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制 InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制 1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode 798 nm, LASER DIODE M-272, 12 PIN
|
SONY NXP Semiconductors N.V.
|
DL-4038-021 |
Red Laser Diode High Power AlGaInP Laser Diode
|
SANYO
|
DL-4038-025 |
High Power AlGaInP Laser Diode(大功率AlGaInP激光二极管) Red Laser Diode High Power AlGaInP Laser Diode
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
ADV7123 ADV7123KST240 |
7V; CMOS, 240MHz triple 10-bit high speed video DAC CMOS, 240 MHz Triple 10-Bit High Speed Video DAC(240MHz三通道10位高速视频D/A转换
|
Analog Devices, Inc.
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
MJE13003 13003BR |
GT 37C 37#16 SKT RECP 三重扩散NPN晶体管(开关稳压器,高压和高速开关) TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR / HIGH VOLTAGE AND HIGH SPEED SWITCHING) TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)
|
KEC(Korea) KEC Holdings KEC[KEC(Korea Electronics)]
|
NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|