| PART |
Description |
Maker |
| 2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管（- 32V的，- 2A型）
|
Rohm Co., Ltd.
|
| 2DB1182Q 2DB1182Q-13 |
32V PNP SURFACE MOUNT TRANSISTOR IN TO252
|
Diodes Incorporated
|
| 2DB1132Q-13 2DB1132P-13 2DB1132P11 |
32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89
|
Diodes Incorporated
|
| 2SD1862 2SD1758 2SD1766 |
Medium Power Transistor (32V, 2A)
|
ROHM[Rohm]
|
| 2SC1741S |
Medium Power Transistor (32V, 0.5A)
|
ROHM[Rohm]
|
| MP6X2 |
Medium Power Transistor (32V, 2A)
|
Rohm
|
| BCF30T/R |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | SOT-23 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 200mA的一（c）| SOT - 23封装
|
NXP Semiconductors N.V.
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4003532-FL-15 T1G4003532-FS T1G4003532-FL-EVB1 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管（32V的，0.8A
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| 2SB1197K A5800311 2SB1197KQ |
Low Frequency Transistor(-32V/ -0.8A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
From old datasheet system
Low Frequency Transistor(-32V, -0.8A)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
Rohm
|
| L2SA1036KRLT1 L2SA1036KLT1 L2SA1036KLT1G L2SA1036K |
Medium Power Transistor(-32V, -0.5A) 中等功率晶体管（- 32V的，- 0.5A的）
|
Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
|
