| PART |
Description |
Maker |
| RJK4002DPD RJK4002DPD-00J2 RJK4002DPD-15 |
400V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK4002DJE RJK4002DJE-00Z0 RJK4002DJE-15 |
400V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK4036DP3-A0 |
400V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK2111 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2070 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
MOS Field Effect Transistor
|
NEC, Corp.
NEC[NEC]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ548 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| NP36N055HLE NP36N055HHE NP36N055IHE |
Nch MOS FET for High-speed switching
|
NEC
|
| 2SJ479 2SJ479L 2SJ479S |
Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
