| PART |
Description |
Maker |
| RF1K49093 FN3969 |
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFETPower MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A 12V 0.130 Ohm Logic Level Dual P-Channel LittleFET Power MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET
2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| FRE264R FRE264D FRE264H |
23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs
23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| BS107 Q67000-S078 |
From old datasheet system
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) 130 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| STY130NF20D |
N-channel 200 V, 0.01 typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package
|
STMicroelectronics
|
| AGR09130E AGR09130EF AGR09130EU |
130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| ISL59292IN ISL5929EVAL1 ISL5929IN |
Dual 14-Bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter
210MHz; 3.6V; 24mA; dual 12-bit, 3.3V, 130/210 MSPS, commLink high speed D/A converter. For quadrature transmit with IF range 0-80MHz, medical/test instrumentation and equipment, wireless communication systems, BWA infrastructure
|
Intersil Corporation
|
| PHA3135-130M |
Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes RadarPulsedPowerModule15，，13014500msPulse 3.1 - 3.5吉赫
RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule 115 130145W100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz
|
MACOM[Tyco Electronics]
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| APT6013JFLL |
POWER MOS 7 600V 39A 0.130 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| CM520813 |
SCR/Diode POW-R-BLOK Modules 130 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
|
