PART |
Description |
Maker |
NX3008CBKS NX3008CBKS-15 |
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
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NXP Semiconductors
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NX3008NBKS NX3008NBKS-15 |
30 V, 350 mA dual N-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
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ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a> N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
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ISL9N308AP3 ISL9N308AS3ST |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mOhm N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m ? N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 8M з N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m з 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
TP2435 TP2435N8 TP2435NW |
P-Channel Enhancement-Mode Vertical DMOS FETs 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex Inc Supertex Inc SUTEX[Supertex, Inc] Supertex, Inc.
|
DN3135N8-G |
N-Channel Depletion-Mode Vertical DMOS FETs 135 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
TC1550TG-G |
N- and P-Channel Enhancement-Mode Dual MOSFET 350 A, 500 V, 60 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Supertex, Inc.
|
FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO 350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
IRF721 |
3.3 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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STMICROELECTRONICS
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