| PART |
Description |
Maker |
| NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| RFP-20N50TPR |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier
4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
|
