| PART |
Description |
Maker |
| DB-960-70W |
70W / 26V / 925-960 MHZ PA USING 2X PD57045S 70W的功 26V 925-960兆赫功率放大器用2倍PD57045S
70W / 26V / 925-960 MHZ PA USING 2X PD57045S
|
Future Designs, Inc.
ST Microelectronics
|
| MAPLST1900-060CF |
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 60W, 26V
|
Tyco Electronics
|
| DB-900-80W 7733 |
80W / 26V / 869-894 MHZ PA USING 2X PD57045S
From old datasheet system
80W / 26V / 869-894 MHZ PA USING 2X PD57045S
|
ST Microelectronics
STMicroelectronics
|
| APW7080 APW7080KA APW7080KAI-TRG APW7080KAI-TRL |
4A, 26V, 380kHz, Asynchronous Step-Down Converter
|
Anpec Electronics Coropration
|
| DB-900-100W |
100W / 26V / 869-894 MHZ PA USING 2X PD57060S
100W / 26V / 869-894 MHZ PA USING 2X PD57060S
|
ST Microelectronics
|
| EV8759-D-00A |
26V, 8A High Current, Low IQ Synchronous Buck Converter
|
Monolithic Power System...
|
| MP8756 MP8756GD |
26V, 6A, Low IQ, High-Current, Synchronous, Step-Down Converter
|
Monolithic Power System...
|
| MP8756GD EV8756-D-00A |
26V, 6A High Current, Low IQ Synchronous Buck Converter
|
Monolithic Power System...
|
| 30KP250 30KP320CA 30KP26A 30KP26C |
30KW TRANSIENT VOLTAGE SUPPRESSOR
Diode TVS Single Bi-Dir 320V 30KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 26V 30KW 2-Pin Case D-6
Diode TVS Single Bi-Dir 26V 30KW 2-Pin Case D-6
|
New Jersey Semiconductor
|
| WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS |
35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛?
128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛?
x32 SRAM Module X32号的SRAM模块
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns
128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns
17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
|
NXP Semiconductors N.V.
White Electronic Designs Corporation
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
