| PART |
Description |
Maker |
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| T-795 |
Line Matching Transformer 600 Ohm to 600 Ohm
|
Rhombus Industries Inc.
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| IRFF310 FN1888 |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
From old datasheet system
1.35A 400V 3.600 Ohm N-Channel Power MOSFET
1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RFD4N06LSM RFD4N06L FN2837 |
4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs
4A 60V 0.600 Ohm Logic Level N-Channel Power MOSFETs
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
|
| 2SK3567 |
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| APT30M60J |
31 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
|
| NDF04N60ZG NDF04N60ZH NDD04N60Z-1G NDD04N60ZT4G |
N-Channel Power MOSFET 600 V, 2.0 Ohm
|
ON Semiconductor
|
| FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 |
From old datasheet system
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 |
From old datasheet system
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STD6NM60N-1 |
4.6 A, 600 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
STMICROELECTRONICS
|
