| PART |
Description |
Maker |
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT�
|
ON Semiconductor
|
| LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
| 2N7002LT1-D 2N7002LT1/D |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT3
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT?3
|
ON Semiconductor
|
| LBSS138LT1G LBSS138LT1 |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
LRC[Leshan Radio Company]
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| SGM0410 |
3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| VN2222LL VN2222LLRLRM VN2222LLG VN2222LLRL VN2222L |
Small Signal MOSFET 150 mAmps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
