| PART |
Description |
Maker |
| MTE125N20E MTE125N20E_D ON2529 |
From old datasheet system
TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| STS9NF30L |
N-CHANNEL 30V - 0.015 OHM - 9A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics
|
| STB36NF03L |
N-CHANNEL 30V - 0.015 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| IXFD76N07-7X |
70 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET 0.348 X 0.283 INCH, DIE
|
IXYS, Corp.
|
| IRF8010S IRF8010SPBF |
75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
High frequency DC-DC converters
|
International Rectifier
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SK3218-01 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 40 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
