PART |
Description |
Maker |
N800210 |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
E-SWITCH
|
EG1218 P040040 |
CONTACT RESISTANCE: 50MILLI-OHMS Max All Dimension In MM
|
E-SWITCH
|
PV6F240NSG-201 PV6F240NSG-211 PV6F240NSG-221 PV6F2 |
Vandal and Water Resistant, Long Life Expectancy CONTACT RESISTANCE: 50mOHM Max.
|
http:// E-SWITCH
|
SMDCHR0603 SMDCHGR0603 SMDFXXXX SMDCH0603 SMDCH080 |
MINIATURE SMD CHIP INDUCTORS 微型贴片电感 Rheostat; Series:RJS; Power Rating:50W; Resistance Max:2ohm; Terminal Type:Lugs; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Number of Turns:1; Resistance:2ohm ; Sensor Input Type:Inductive; Sensing Range Max:5mm; Sensor Output:NO RoHS Compliant: Yes
|
Electronic Theatre Controls, Inc. N.A. ETC[ETC] List of Unclassifed Manufacturers
|
1T397 |
SWITCH, VANDAL RESISTANT SEALED; Switch function type:SPDT Mom; Voltage, contact AC max:50V; Voltage, contact DC max:50V; Temp, op. max:70(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:19.2mm; Length / Height, RoHS Compliant: Yes
|
Sony Corporation
|
ADG1419 ADG1419BCPZ-REEL7 ADG1419BRMZ ADG1419BRMZ- |
2.1 Ω Max On Resistance ±15 V/12 V/±5 V iCMOS SPDT Switch; Package: Micro SOIC; No of Pins: 8; Temperature Range: Ind SGL POLE DOUBLE THROW SWITCH, PDSO8 2.1 Ω On Resistance, ±15 V/ 12 V/±5 V iCMOS SPDT Switch 2.1 楼? On Resistance, 隆戮15 V/ 12 V/隆戮5 V iCMOS SPDT Switch
|
Analog Devices, Inc.
|
1140-4R7M-RC 1140-101K-RC 1140-3R3M-RC 1140-681K-R |
RF Choke; Series:1140; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:100uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.025ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:3.3uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:680uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.139ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:470uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.114ohm; Leaded Process Compatible:Yes; Body Material:Ferrite Very high current capacity Low DCR RF Choke; Series:1140; Inductance:82uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.023ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:2.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.002ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
|
BOURNS INC Bourns Electronic Solutions
|
2SK3367 |
Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
2SK3402 |
Low on-resistance RDS(on)1 =15 m MAX. (VGS = 10 V, ID = 18A)
|
TY Semiconductor Co., Ltd
|
AP6680GM |
Low On-Resistance, High Vgs Max Rating Voltage
|
Advanced Power Electronics Corp.
|