| PART |
Description |
Maker |
| TISP6NTP2B |
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TISP61089 |
DUAL FORWARD-CONDUCTING-P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
Power Innovations International, Inc.
|
| TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
TELECOM, SURGE PROTECTION CIRCUIT, PDIP8
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
|
BOURNS INC
BOURNS[Bourns Electronic Solutions]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| TISP61089ADR-S TISP61089SDR-S TISP61089ASDR-S |
SURGE PROT THYRIST 100V NEG SLIC TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
TISP Thyristor Overvoltage Protectors Dual P Gate Forward Conducting TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
PROTECTOR - OVER VOLTAGE TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
|
Bourns, Inc.
|
| IHW40N60R |
Reverse conducting IGBT
|
Infineon Technologies A...
|
| CRD5AS-12B-T13B00 |
Reverse Conducting Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
| IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
