| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| UPC3232TB UPC3232TB-E3 UPC3232TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| 2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors
Bipolar Junction Transistor
SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
| BFP690E6327 |
NPN Silicon Germanium RF Transistor
|
Infineon
|
| BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFP650F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP640F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG3032M14-T3-A NESG3032M14-A NESG3032M14-T3 NESG |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| BFU910F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
