| PART |
Description |
Maker |
| SIGC42T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling
|
Infineon Technologies AG
|
| LGL29K-G2J1-24-Z Q65110A1746 |
Version 1.0 (Replacement in due course)
|
OSRAM GmbH
|
| AOK20B120E2 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT1608-SEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0408-05A |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| LM2575-ADJ LM2575 LM2575-5 LM2575-12 LM2575-3.3 LM |
From old datasheet system
1.0 A STEP-OWN VOLTAGE REGULATOR
EASY SWITCHERE 1.0 A STEP-DOWN VOLTAGE REGULATOR
EASY SWITCHERE⑩ 1.0 A STEP-DOWN VOLTAGE REGULATOR
EASY SWITCHERE⒙ 1.0 A STEP-DOWN VOLTAGE REGULATOR
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| IPT1208-SEF IPT1208-TEF IPT1208-CEF IPT1208-BEF |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| ASPI-0630LR-R47 ASPI-0630LR-R82 ASPI-0630LR-R56 AS |
High saturation current. Low loss due to low DC resistance.
|
Abracon Corporation
|
| AOK20B120E1 |
Low turn-off switching loss due to fast turn-off time
|
Alpha & Omega Semicondu...
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| IPT12Q06-CEB IPT12Q06-BEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
