PART |
Description |
Maker |
EPG4012J |
1000Base-T Module DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
EPG4011J-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
8342 8343 8344 8341 |
RJ-45 Single Port Connector with LEDs Intergrated Magnetics 1000 Base-T 个RJ - 45单端口连接器与LED集成1000 Base - T
|
Filtran Ltd. Filtran, Ltd.
|
40ST1025-1S |
40 PIN SMD QUAD 10 BASE-T/100 BASE-TX TRANSFORMER
|
Bothhand USA, LP.
|
G1PM109NM-LF G1PM109NMLF |
Compliant with IEEE 802.3ab standard for 1000 BASE-T 1000 BASE ?T MAGNETICS MODULES
|
Bothhand USA, LP.
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
S558-5999-45 |
HIGH SPEED LAN MAGNETICS DATACOM TRANSFORMER FOR ATM; 100 BASE-TX; 10/100 BASE-TX; LAN APPLICATION(S)
|
Glenair, Inc.
|
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor POWEREX[Powerex Power Semiconductors]
|
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|