PART |
Description |
Maker |
GR160MT12K |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
C3M0120090J |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
C3M0030090K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
C3M0065100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
C3M0075120K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp. IXYS[IXYS Corporation]
|
92005A120 C2M0080120D 74270011 CRD8FF1217P-1 |
CREE Silicon Carbide MOSFET Evaluation Kit CREE Silicon Carbide MOSFET Evaluation Kit
|
Cree, Inc
|
SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package 600V Silicon Carbide Ultrafast Schottky Diode Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SML100M12MSF |
NORMALLY-OFF SILICON CARBIDE POWER JFET
|
Seme LAB
|
MSICSN10060 MSICSS10060 MSICST10060 |
SILICON CARBIDE SCHOTTKY POWER RECTIFIER
|
Microsemi Corporation
|
GB10MPS17-247 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
|