| PART |
Description |
Maker |
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| AD736JRZ-R7 AD736JR-REEL7 AD736AQZ |
20A, 12 Vin, 1.2 Vout Step Down Converter Evaluation Module RMS TO DC CONVERTER, 0.005 MHz, PDSO8
Low Cost, Low Power, True RMS-to-DC Converter RMS TO DC CONVERTER, 0.005 MHz, PDSO8
RMS TO DC CONVERTER, 0.005 MHz, CDIP8
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| S102K S106D S102J S102C |
High Precision Foil Resistor with TCR of 【 2.0 ppm/∑C, Tolerance of 【 0.005 % and Load Life Stability of 【 0.005 %
High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 % and Load Life Stability of ± 0.005 %
|
Vishay Siliconix
|
| 2954798 |
EMG 45-DIO 8E/LP
|
PHOENIX CONTACT
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
10 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
12 V, 500 mA, gold bonded germanium diode
50 V, 500 mA, gold bonded germanium diode
75 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
125 V, 500 mA, gold bonded germanium diode
85 V, 500 mA, gold bonded germanium diode
30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
BKC International Electronics
List of Unclassifed Man...
|
| STB150NF04 |
N-channel 40 V - 0.005 Ω - 80 A - D2PAK STripFET?II Power MOSFET
N-channel 40 V - 0.005 ヘ - 80 A - D2PAK STripFET⑩II Power MOSFET
|
STMicroelectronics
|
| BY9318 BY9300 BY9304 BY9306 BY9308 BY9310 BY9312 B |
Fast high-voltage soft-recovery controlled avalanche rectifiers 0.01 A, 8400 V, SILICON, SIGNAL DIODE
Fast high-voltage soft-recovery controlled avalanche rectifiers 0.005 A, 11200 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
|
